![]() SURFACE MOUNT FAST RECOVERY SILICON RECTIFIER Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram Ratings o C ambient temperature unless otherwise specified. Maximum Repetitive Reverse Voltage Average Rectified Forward Current.375 " lead length = 100☌ Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability.įFM101W-W : 1A,50V,150NS,SMX. XC2336B-24F40L : RISC MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE Package Type: LFQP, Other, 0.50 MM PITCH, GREEN, PLASTIC, LQFP-64 Pin Count: 64īFG540W : BFG540W BFG540W/X BFG540W/XR NPN 9 GHZ Wideband Transistor Package: SOT343N.įES16FTR : 16A Ultra Fast Recovery Rectifier. SRD00217O : Ternary PIN Photodiode in Receptacle PackageīC 818K-16W H6327 : Transistor (bjt) - Single Discrete Semiconductor Product 500mA 25V 250mW NPN TRANS AF NPN 25V 500MA SOT323 Specifications: Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Current - Collector (Ic) (Max): 500mA Power - Max: 250mW DC Current Gain (hFE) (Min) Ic, Vce: 100 100mA, 1V Vce Saturation (Max) Ib, Ic: 700mV 50mA, 500mA Frequency - Transition: 170MHz Currenĭ452N14E : 450 A, 1400 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single Pin Count: 1 Number of Diodes: 1 IF: 450000 mA VRRM: 1400 volts The Allegro® A138x family of programmable linear Hall effect sensors was designed specifically to achieve both goals. SDE2526 : 2 Kb Nonvolatile Memory 2-kb E2PROM With I*2c Bus Interface With Extended Temperature RangeĪ1384ELHLT-T : New applications for linear output Hall effect sensors, such as displacement, angular position, and current measurement, require high accuracy in conjunction with small package size. PEB2260-N : Sicofi 2 (Dual Channel Codec Filter) Some Part number from the same manufacture Infineon Technologies CorporationīSP50E6327 NPN Silicon Darlington TransistorīSP550 MiniproFET ( High-side Switch Short-circuit Protection Input Protection Overtemperature Protection With Hysteresis )īSP550E6327 Mini ProFET Smart High Side SwitchīSP60E6327 PNP Silicon Darlington TransistorīSP613P Sipmos(r) Small-signal-transistor: -60v, -2.9aīSP61E6327 PNP Silicon Darlington TransistorīSP75-AE6327 HitFET Smart Low Side Power SwitchīFG196E6327 : Amplifier NPN Silicon RF Transistor max.Įmitter-base breakdown voltage = 100 ♚, = 0 Collector-emitter cutoff current VCE = VCEOmax, VBE = 0 Emitter cutoff current VEB 0 DC current gain = 150 mA, VCE = 500 mA, VCE 10 V Collector-emitter saturation = 500 mA, 1 mA Base-emitter saturation voltage = 500 mA, 1 mAĪC Characteristics Transition frequency = 100 mA, VCE = 100 MHz Turn-on time = 500 mA, = 0.5mA Turn-off time = 500 mA, = 0.5mA ![]() DC Characteristics Collector-emitter breakdown voltage = 10 mA, = 0 V(BR)CEO typ. Thermal Resistance Junction - soldering point 1) RthJSġFor calculation of R thJA please refer to Application Note Thermal ResistanceĮlectrical Characteristics = 25☌, unless othertwise specified Parameter Symbol Values min. ![]() BSP62 (PNP)Ĭollector-emitter voltage Collector-base voltage Emitter-base voltageĭC collector current Peak collector current Base current Total power dissipation 124 ☌ Junction temperature Storage temperature High collector current Low collector-emitter saturation voltage Complementary types: BSP60. ![]()
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